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PDF HMC320MS8G Data sheet ( Hoja de datos )
| Número de pieza | HMC320MS8G | |
| Descripción | GaAs MMIC LOW NOISE AMPLIFIER / 5.0 - 6.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0900
MICROWAVE CORPORATION
HMC320MS8G
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
8
8 - 92
Typical Applications
The HMC320MS8G is ideal for:
• UNII
• HiperLAN
Functional Diagram
Features
Selectable Functionality:
LNA, Driver, or LO Buffer Amp
Adjustable Input IP3 Up to +10 dBm
+3V Operation
Ultra Small 8 Lead MSOP:
14.8 mm2 x 1mm High
General Description
The HMC320MS8G is a low cost C-band fixed
gain Low Noise Amplifier (LNA). The HMC320MS8G
operates using a single positive supply that can be
set between +3V and +5V. With +3V bias, the LNA
provides a noise figure of 2.5dB, 12dB gain and
better than 10dB return loss across the UNII band.
The HMC320MS8G also features adaptive baising
that allows the user to select the optimal P1dB
performance for their system using an external set
resistor on the “RES” pin. P1dB performance can
be set between a range of +1 dBm to +13dBm. The
low cost LNA uses an 8-leaded MSOP ground base
surface mount plastic package, which occupies less
than 14.8mm2.
Electrical Specifications, TA = +25° C, Vdd = +3V
Parameter
Low Power*
(VSET = 0V, Idd = 7 mA)
Medium Power*
High Power*
(VSET = 3V, Idd = 25 mA) (VSET = 3V, Idd = 40 mA)
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Units
Frequency Range
5-6
5-6
5-6
GHz
Gain
8 10 16 8 12 16 9 13 16 dB
Gain Variation over Temperature
0.025 0.035
0.025 0.035
0.025 0.035 dB/°C
Gain Flatness
Noise Figure
Input Return Loss
±0.5
±1.0
±1.5
dB
2.7 3.8
2.5 3.8
2.6 3.8
dB
4 10
4 10
4 10
dB
Output Return Loss
7 13
10 18
10 20
dB
Output Power for 1 dB Compression (P1dB) -4 -1
69
9 12
dBm
Input Third Order Intercept Point (IIP3)
-3 1
48
6 10
dBm
Supply Current (Idd)
7 25 40 mA
* RBIAS resistor value sets current. See adaptive biasing application note.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.0900
MICROWAVE CORPORATION
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+7.0 Vdc
Control Voltage Range (VSET)
0 to Vdd
RF Input Power (RFin)(Vdd = +3.0 Vdc) +5 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 2.98 mW/°C above 85 °C)
0.194 W
Thermal Resistance
(channel to ground paddle)
336 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Outline Drawing
HMC320MS8G
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
Truth Table
VSET
Operating
Current Idd
Operating
State
Resistor Rbias
0V
7 mA
Low Power
174 Ohm
3V
25 mA
Medium Power
23 Ohm
3V
40 mA
High Power
7 Ohm
Set external bias resistor (RBIAS) to achieve
desired operating current, 0 < RBIAS < 200 Ohm.
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
8 - 96
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC320MS8G.PDF ] | |
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