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PDF HMC315 Data sheet ( Hoja de datos )

Número de pieza HMC315
Descripción GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER/ DC - 7.0 GHz
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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No Preview Available ! HMC315 Hoja de datos, Descripción, Manual

MICROWAVE CORPORATION
v01.0701
HMC315
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8 Typical Applications
The HMC315 is ideal for:
• Fiber Optic OC-48 Systems
• Microwave Test Instrumentation
• Broadband Mobile Radio Platforms
Functional Diagram
Features
Saturated Output Power: +17 dBm
Output IP3: +33 dBm
Gain: 15 dB
Single Supply: +5V to +7V
Ultra Small Package: SOT26
General Description
The HMC315 is an ultra broadband GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifier that operates from a single positive
supply. The surface mount SOT26 amplifier can
be used as a broadband gain stage, or used
with external matching for optimized narrow band
applications. The Darlington configuration results
in reduced sensitivity to normal process varia-
tions and provides a good 50-ohm input/output
port match. The amplifier provides 15 dB of gain
and +17 dBm of saturated power while operating
from a single positive +7V supply.
Electrical Specifications, TA = +25° C, As a Function of Vcc
Parameter
Frequency Range
Gain
Gain Variation over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (OIP3) @ 1.0 GHz
Noise Figure
Supply Current (Icc)
Vcc = +5V
Min. Typ. Max.
DC - 7
11 14
17
0.015
0.025
7 10
37
18 21
8 11
10 13
23 26
6.5
30
Min.
11
7
3
18
13
15
30
Vcc = +7V
Typ.
DC - 7
15
0.015
10
7
21
16
17.5
33
6.5
50
Max.
18
0.025
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
8 - 80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

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HMC315 pdf
MICROWAVE CORPORATION
v01.0701
HMC315
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8 Application Circuit
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+7.5 Vdc
RF Input Power (RFin)(Vcc = +7.0 Vdc) +20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 60 °C)
(derate 4.14 mW/°C above 60 °C)
0.373 W
Thermal Resistance
(junction to lead)
242 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +60 °C
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1.
2. External Blocking Capacitors are required on Pins 1 & 3.
Outline Drawing
8 - 84
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

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