PDF HMC292 Data sheet ( Hoja de datos )

Número de pieza	HMC292
Descripción	GaAs MMIC DOUBLE-BALANCED MIXER/ 18 - 32 GHz
Fabricantes	Hittite Microwave Corporation
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No Preview Available ! v02.1202 MICROWAVE CORPORATION HMC292 GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Typical Applications The HMC292 is ideal for: • Microwave Point to Point Radios • LMDS • SATCOM Functional Diagram 5 Features Input IP3: +19 dBm LO / RF Isolation: 36 dB Passive: No DC Bias Required Small Size: 0.58 mm x 1.04 mm General Description The HMC292 chip is a miniature passive GaAs MMIC double-balanced mixer which can be used as an upconverter or downconverter from 18 - 32 GHz in a small chip area of 0.66 mm2. Excellent isolations are provided by on-chip baluns, which require no external components and no DC bias. All data is measured with the chip in a 50 ohm test ﬁxture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). Electrical Speciﬁcations, TA = +25° C Parameter LO = +13 dBm Min. Typ. Frequency Range, RF & LO 20 - 30 Frequency Range, IF DC - 8 Conversion Loss 7.5 Noise Figure (SSB) 7.5 LO to RF Isolation 31 38 LO to IF Isolation 33 40 RF to IF Isolation 20 25 IP3 (Input) 17 19 IP2 (Input) 45 50 1 dB Gain Compression (Input) 8 12 Max. 9 9 LO = +13 dBm Min. Typ. 18 - 32 DC - 8 8 8 30 36 30 40 17 25 15 19 42 50 8 12 Max. 10 10 Units GHz GHz dB dB dB dB dB dB dBm dBm 5 - 70 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 page v02.1202 MICROWAVE CORPORATION HMC292 GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz MMIC Assembly Techniques Ribbon Bond Ribbon Bond 5 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin ﬁlm substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin ﬁlm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) of minimal length <0.31 mm (<12 mils) is recom- mended to minimize inductance on the RF ports. 5 - 74 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 Page

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