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PDF HMC283 Data sheet ( Hoja de datos )
| Número de pieza | HMC283 | |
| Descripción | GaAs MMIC MEDIUM POWER AMPLIFIER/ 17 - 40 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC283 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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v02.0500
MICROWAVE CORPORATION
1 Typical Applications
The HMC283 MPA is ideal for:
• Millimeterwave Point-to-Point Radios
• VSAT
• SATCOM
Functional Diagram
HMC283
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Features
High Gain: 21 dB
Psat Output Power: +21 dBm
Wideband Performance: 17 - 40 GHz
Small Chip Size: 0.88 mm x 1.72 mm
General Description
The HMC283 chip is a four stage GaAs MMIC
Medium Power Amplifier (MPA) which covers the fre-
quency range of 17 to 40 GHz. The chip can easily
be integrated into Multi-Chip Modules (MCMs) due
to its small (1.62 mm2) size. The chip utilizes a GaAs
PHEMT process offering 20 dB gain and +21 dBm
output power from a bias supply of +3.5V @ 300mA.
The HMC283 may be used as a frequency doubler.
A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring
microwave output power. All data is with the chip
in a 50 ohm test fixture connected via 0.076mm x
0.0127mm (3mil x 0.5mil) ribbon bonds of minimal
length 0.31mm (<12mils).
Electrical Specifications, TA = +25° C, Vdd= +3.5V*, ldd = 300 mA
Parameter
Min. Typ. Max.
Frequency Range
17 - 40
Gain
16 21
Gain Flatness (Any 1 GHz BW)
±0.8
Input Return Loss
9
Output Return Loss
6
Reverse Isolation
40 50
Output Power for 1 dB Compression (P1dB)
14 18
Saturated Output Power (Psat)
17 21
Output Third Order Intercept (IP3)
21 26
Noise Figure
10 14
Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.)
300 400
*Vdd = Vd1, 2, 3, 4 connected to +3.5V, adjusting Vgg = Vg1, 2, 3, 4 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
mA
1 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v02.0500
MICROWAVE CORPORATION
1
HMC283
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane
eutectically or with conductive epoxy (see HMC gen-
eral Handling, Mounting, Bonding Note.)
50 Ohm Microstrip transmission lines on 0.127 mm (5
mil) thick alumina thin film substrates are recom-
mended for bringing RF to and from the chip (Figure 1).
If 0.254 mm (10 mil) thick alumina thin film substrates
must be used, the die should be raised 0.150 mm (6
mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is
to attach the 0.102 mm (4 mil) thick die to a 0.150 mm
(6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the
die as possible in order to minimize bond wire length.
Figure 3: Typical HMC283 Assembly
Typical die-to-substrate spacing is 0.076 mm (3 mils).
Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) is recommended to minimize inductance on the RF ports.
0.025 mm (1 mil) diameter ball or wedge bonds are acceptable for DC bias connections.
RF bypass capacitors should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted eutecti-
cally or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. The
photo in figure 3 shows a typical assembly for the HMC283 MMIC chip.
1 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC283.PDF ] | |
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