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PDF HMC260 Data sheet ( Hoja de datos )
| Número de pieza | HMC260 | |
| Descripción | GaAs MMIC FUNDAMENTAL MIXER/ 14 - 26 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0301
MICROWAVE CORPORATION
Typical Applications
The HMC260 is ideal for:
• Point to Point Radios
• Point to Multi Point Radios
Functional Diagram
5
HMC260
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
Features
Passive: No DC Bias Required
Input IP3: +20 dBm
LO/RF Isolation: 39 dB
Small Size: 0.55mm2
General Description
The HMC260 is a passive double balanced mixer
that can be used as an upconverter or down-
converter between 14 and 26 GHz. The minia-
ture monolithic mixer (MMIC) requires no external
components or matching circuitry. The HMC260
provides excellent LO to RF and LO to IF sup-
pression due to optimized balun structures. The
mixer operates with LO drive levels above +9
dBm. Measurements were made with the chip
mounted and bonded into in a 50 ohm test fixture.
Data includes the parasitic effects of wire bond
assembly. Connections were made with a 3 mil
ribbon bond with minimal length (<12 mil).
Electrical Specifications, TA = +25° C
Parameter
LO = +13 dBm, IF = 1 GHz
Min. Typ. Max.
Frequency Range, RF & LO
14 - 26
Frequency Range, IF
DC - 8
Conversion Loss
7.5 10.5
Noise Figure (SSB)
7.5 10.5
LO to RF Isolation
30 39
LO to IF Isolation
25 35
RF to IF Isolation
18 25
IP3 (Input)
13 20
IP2 (Input)
45 55
1 dB Gain Compression (Input)
6 11
*Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.
Units
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
5 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v01.0301
MICROWAVE CORPORATION
MIC Assembly Techniques
Ribbon Bond
HMC260
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
Ribbon Bond
5
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to
minimize inductance on RF, LO & IF ports.
5 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC260.PDF ] | |
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