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PDF HMC258 Data sheet ( Hoja de datos )
| Número de pieza | HMC258 | |
| Descripción | GaAs MMIC SUB-HARMONICALLY PUMPED MIXER/ 14 - 21 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC258 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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v01.0801
MICROWAVE CORPORATION
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Typical Applications
The HMC258 is ideal for:
• Microwave Pt to Pt Radios
• VSAT
• SATCOM
Features
Integrated LO Amplifier: 0dBm Drive
Sub-Harmonically Pumped (x2) LO
High 2LO/RF Isolation: 40 dB
Small Size: 0.8mm x 1.1mm
Functional Diagram
5
General Description
The HMC258 chip is a compact sub-harmonically
pumped (x2) single ended MMIC mixer with an
integrated LO amplifier which can be used as an
upconverter or downconverter. The chip utilizes a
GaAs MESFET technology that results in a small
overall chip area of 0.9mm2. The 2LO to RF isola-
tion is excellent eliminating the need for additional
filtering. The LO amplifier is a single bias (+5V)
two stage design with only 0dBm drive require-
ment. A less stringent oscillator design is made
possible by the low LO drive and sub-harmonic
nature of the chip. All data is with the chip in a 50
ohm test fixture connected via 0.025mm (1 mil)
diameter wire bonds of minimal length <0.31 mm
(<12 mils).
Electrical Specifications, TA = +25° C, LO Drive = 0 dBm
Parameter
IF = 1 GHz
Vdd = +5.0V
Min. Typ. Max.
Min.
Frequency Range, RF
14 - 21
Frequency Range, LO
7 - 10.5
Frequency Range, IF
DC - 3
Conversion Loss
10 13.5
Noise Figure (SSB)
10 13.5
2LO to RF Isolation
30 40
34
2LO to IF Isolation
30 40 ~ 50
38
IP3 (Input)
07
0
1 dB Compression (Input)
-5 0
-4
Supply Current (Idd)
50
IF = 1 GHz
Vdd = +5.0V
Typ.
17 - 20
8.5 - 10
DC - 3
9.5
9.5
40
40 ~ 50
7
1
50
Max.
12
12
Units
GHz
GHz
GHz
dB
dB
dB
dB
dBm
dBm
mA
5 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v01.0801
MICROWAVE CORPORATION
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
MIC Assembly Techniques
5
Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates
are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick
alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that
the surface of the die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat
spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize
bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor
(mounted eutuctically or by conductive epoxy) placed no further than 0.762mm (30 Mils)
from the chip is recommended. The photo in figure 3 shows a typical assembly for the
HMC258 MMIC chip.
Figure 3: Typical HMC258 Assembly
5 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC258.PDF ] | |
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