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PDF HMC154S8 Data sheet ( Hoja de datos )
| Número de pieza | HMC154S8 | |
| Descripción | GaAs MMIC SMT LOW DISTORTION T/R SWITCH/ DC - 2.5 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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HMC154S8v01.0701
MICROWAVE CORPORATION
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Typical Applications
The HMC154S8 is ideal for:
• MMDS & WirelessLAN
• Basestation Infrastructure
• Portable Wireless
Functional Diagram
14
Features
High Third Order Intercept: +60 dBm
Single Positive Supply: +3 to +10V
High RF Power Capability
TTL/CMOS Control
General Description
The HMC154S8 is a low-cost SPDT switch in an
8-lead SOIC package for use in transmit-receive
applications which require very low distortion at
high signal power levels. The device can control
signals from DC to 2.5 GHz and is especially
suited for 900 MHz and 1.8 - 2.2 GHz applica-
tions. The design provides exceptional inter-
modulation performance; providing a +60dBm
third order intercept at 8 Volt bias. RF1 and RF2
are reflective shorts when “Off”. On-chip circuitry
allows single positive supply operation at very low
DC current with control inputs compatible with
CMOS and most TTL logic families.
Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Min. Typ.
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
0.5
0.7
1.0
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
22 25
19 22
15 18
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
20 30
14 18
10 13
Input Power for 1 dB Compression
0/8V Control
0.5 - 1.0 GHz
0.5 - 2.0 GHz
35 39
34 38
Input Third Order Intercept
0/8V Control
0.5 - 1.0 GHz
0.5 - 2.0 GHz
55 60
54 60
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 2.5 GHz
10
24
Max.
0.7
0.9
1.3
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
ns
14 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
MICROWAVE CORPORATION
v01.0701
HMC154S8
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Typical Application Circuit
14
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines
lowest frequency of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
14 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC154S8.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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