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PDF HM62W8511HCJP-10 Data sheet ( Hoja de datos )
| Número de pieza | HM62W8511HCJP-10 | |
| Descripción | 4M High Speed SRAM (512-kword x 8-bit) | |
| Fabricantes | Hitachi Semiconductor | |
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HM62W8511HC Series
4M High Speed SRAM (512-kword × 8-bit)
ADE-203-1201 (Z)
Preliminary
Rev. 0.0
Sep. 20, 2000
Description
The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. The HM62W8511HC is packaged
in 400-mil 36-pin SOJ for high density surface mounting.
Features
• Single supply : 3.3 V ± 0.3 V
• Access time : 10 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current : 115 mA (max)
• TTL standby current : 40 mA (max)
• CMOS standby current : 5 mA (max)
: 1 mA (max) (L-version)
• Data retension current : 0.6 mA (max) (L-version)
• Data retension voltage : 2 V (min) (L-version)
• Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest
Hitachi’s Sales Dept. regarding specification.
1 page  
Operation Table
CS OE
H×
LH
LL
LH
LL
Note: ×: H or L
WE
×
H
H
L
L
HM62W8511HC Series
Mode
Standby
Output disable
Read
Write
Write
VCC current
ISB, ISB1
I CC
I CC
I CC
I CC
I/O
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle (1) to (3)
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
–0.5 to +4.6
–0.5*1 to VCC+0.5*2
1.0
0 to +70
Storage temperature
Tstg –55 to +125
Storage temperature under bias
Tbias
–10 to +85
Notes: 1. VT (min) = –2.0 V for pulse width (under shoot) ≤ 6 ns.
2. VT (max) = VCC+2.0 V for pulse width (over shoot) ≤ 6 ns.
Unit
V
V
W
°C
°C
°C
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Symbol Min
Typ
Supply voltage
VCC*3
VSS * 4
3.0
0
3.3
0
Input voltage
VIH 2.0
—
VIL –0.5*1
—
Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 6 ns.
2. VIH (max) = VCC+2.0 V for pulse width (over shoot) ≤ 6 ns.
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all VSS pins must be on the same level.
Max
3.6
0
VCC + 0.5*2
0.8
Unit
V
V
V
V
5
5 Page 
Write Timing Waveform (2) (CS Controlled)
HM62W8511HC Series
Address
CS *3
WE *3
Dout
Din
tWC
Valid address
tCW
tWR
tAW
tWP
tAS
tWHZ
tOW
High impedance*5
tDW tDH
*4 Valid data
*4
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet HM62W8511HCJP-10.PDF ] | |
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