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PDF HM62W16255HCTT-10 Data sheet ( Hoja de datos )
| Número de pieza | HM62W16255HCTT-10 | |
| Descripción | 4M High Speed SRAM (256-kword x 16-bit) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HM62W16255HC Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-1200 (Z)
Preliminary
Rev. 0.0
Sep. 1, 2000
Description
The HM62W16255HC is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. The HM62W16255HC is
packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 10 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 145 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 1 mA (max) (L-version)
• Data retention current: 0.6 mA (max) (L-version)
• Data retention voltage: 2.0 V (min) (L-version)
• Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest
Hitachi’s Sales Dept. regarding specification.
1 page  
HM62W16255HC Series
Operation Table
CS OE WE LB
H×××
L HH×
L L HL
L L HL
L L HH
L L HH
L× L L
L ×LL
L ×LH
L ×LH
Note: ×: H or L
UB Mode
VCC current
× Standby
ISB, ISB1
× Output disable ICC
L Read
I CC
H Lower byte read ICC
L Upper byte read ICC
H—
I CC
L Write
I CC
H Lower byte write ICC
L Upper byte write ICC
H—
I CC
I/O1–I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
I/O9–I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
Ref. cycle
—
—
Read cycle
Read cycle
Read cycle
—
Write cycle
Write cycle
Write cycle
—
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
–0.5 to +4.6
–0.5*1 to VCC + 0.5*2
1.0
0 to +70
Storage temperature
Tstg –55 to +125
Storage temperature under bias
Tbias
–10 to +85
Notes: 1. VT (min) = –2.0 V for pulse width (under shoot) ≤ 6 ns
2. VT (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns
Unit
V
V
W
°C
°C
°C
5
5 Page 
Read Timing Waveform (2) (WE = VIH, LB = VIL, UB, = VIL)
tRC
Address
CS
OE
Dout
(Lower/Upper
byte)
Valid address
tAA
tACS
tOE
High Impedance*4
tOLZ*1
tCLZ *1
HM62W16255HC Series
tOH
tCHZ*1
tOHZ*1
Valid data
*4
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet HM62W16255HCTT-10.PDF ] | |
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