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HM62W16255H fiches techniques PDF

Hitachi Semiconductor - 4M High Speed SRAM (256-kword x 16-bit)

Numéro de référence HM62W16255H
Description 4M High Speed SRAM (256-kword x 16-bit)
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HM62W16255H fiche technique
HM62W16255H Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-751D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. The
HM62W16255H is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density
surface mounting.
Features
Single 3.3 V supply: 3.3 V ± 0.3V
Access time: 12/15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 180/160 mA (max)
TTL standby current: 60/50 mA (max)
CMOS standby current: 5 mA (max)
: 1mA (max) (L-version)
Data retension current: 0.6 mA (max) (L-version)
Data retension voltage: 2.0 V (min) (L-version)
Center VCC and VSS type pinout

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