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HM62V8512CLTTI-7 fiches techniques PDF

Hitachi Semiconductor - Wide Temperature Range Version4 M SRAM (512-kword x 8-bit)

Numéro de référence HM62V8512CLTTI-7
Description Wide Temperature Range Version4 M SRAM (512-kword x 8-bit)
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HM62V8512CLTTI-7 fiche technique
HM62V8512CI Series
Wide Temperature Range Version
4 M SRAM (512-kword × 8-bit)
ADE-203-1215A (Z)
Rev. 1.0
Feb. 6, 2001
Description
The Hitachi HM62V8512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62V8512CI Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The HM62V8512CI Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Access time: 70 ns (max)
Power dissipation
Active: 6.0 mW/MHz (typ)
Standby: 2.4 µW (typ)
Completely static memory. No clock or timing strobe required
Equal access and cycle times
Common data input and output: Three state output
Directly LV-TTL compatible: All inputs and outputs
Battery backup operation
Operating temperature: –40 to +85˚C
Ordering Information
Type No.
HM62V8512CLTTI-7
Access time
70 ns
Package
400-mil 32-pin plastic TSOP II (TTP-32D)

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