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Numéro de référence | HM62V8512BLRR-7 | ||
Description | 4 M SRAM (512-kword x 8-bit) | ||
Fabricant | Hitachi Semiconductor | ||
Logo | |||
HM62V8512B Series
4 M SRAM (512-kword × 8-bit)
ADE-203-905G (Z)
Rev. 6.0
Mar. 31, 2000
Description
The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,
higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high
density mounting. The HM62V8512B is suitable for battery backup system.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Access time: 70/85 ns (max)
• Power dissipation
Active: 15 mW/MHz (typ)
Standby: 3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs
• Battery backup operation
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Pages | Pages 17 | ||
Télécharger | [ HM62V8512BLRR-7 ] |
No | Description détaillée | Fabricant |
HM62V8512BLRR-7 | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM62V8512BLRR-7SL | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM62V8512BLRR-7UL | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM62V8512BLRR-8 | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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