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Número de pieza | HM62V16256CI | |
Descripción | Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HM62V16256CI (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
No Preview Available ! HM62V16256CI Series
Wide Temperature Range Version
4 M SRAM (256-kword × 16-bit)
ADE-203-1230A (Z)
Rev. 1.0
Feb. 6, 2001
Description
The Hitachi HM62V16256CI Series is 4-Mbit static RAM organized 262,144-word × 16-bit.
HM62V16256CI Series has realized higher density, higher performance and low power consumption by
employing CMOS process technology (6-transistor memory cell). It offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic
TSOPII.
Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 70 ns (max)
• Power dissipation:
Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
Standby: 2 µW (typ) (VCC = 2.5 V)
: 2.4 µW (typ) (VCC = 3.0 V)
• Completely static memory.
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
• Temperature range: –40 to +85°C
1 page Operation Table
CS1 CS2 WE OE UB LB I/O0 to I/O7
H×
×
××
×
High-Z
× L × × × × High-Z
× × × × H H High-Z
L H H L L L Dout
L H H L H L Dout
L H H L L H High-Z
L H L × L L Din
L H L × H L Din
L H L × L H High-Z
L H H H × × High-Z
Note: H: VIH, L: VIL, ×: VIH or VIL
HM62V16256CI Series
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to VSS
Terminal voltage on any pin relative to VSS
Power dissipation
Storage temperature range
VCC
VT
PT
Tstg
Storage temperature range under bias
Tbias
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
Value
–0.5 to + 4.6
–0.5*1 to VCC + 0.3*2
1.0
–55 to +125
–40 to +85
Unit
V
V
W
°C
°C
DC Operating Conditions
Parameter
Symbol Min
Supply voltage
VCC
VSS
Input high voltage VCC = 2.2 V to 2.7 V VIH
VCC = 2.7 V to 3.6 V VIH
Input low voltage VCC = 2.2 V to 2.7 V VIL
VCC = 2.7 V to 3.6 V VIL
Ambient temperature range
Ta
2.2
0
2.0
2.2
–0.2
–0.3
–40
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
Typ
2.5/3.0
0
—
—
—
—
—
Max Unit
3.6 V
0V
VCC + 0.3
VCC + 0.3
0.4
V
V
V
0.6 V
85 °C
Note
1
1
5
5 Page Write Cycle (1) (WE Clock)
Address
CS1
CS2
LB, UB
WE
Din
Dout
tAS*6
HM62V16256CI Series
tWC
Valid address
tCW*5
tCW*5
tBW
tWR*7
tAW
tWP*4
tWHZ*1, 2
tDW tDH
Valid data
tOW*2
High impedance
11
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet HM62V16256CI.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM62V16256C | 4 M SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
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