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Número de pieza | HM628512CLTTI-7 | |
Descripción | Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HM628512CLTTI-7 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! HM628512CI Series
Wide Temperature Range Version
4 M SRAM (512-kword × 8-bit)
ADE-203-1211 (Z)
Preliminary
Rev. 0.0
Aug. 30, 2000
Description
The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has
realized higher density, higher performance and low power consumption by employing Hi-CMOS process
technology. The HM628512CI Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP.
Features
• Single 5 V supply
• Access time: 70 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature: –40 to +85˚C
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
1 page Function Table
WE CS
×H
HL
HL
LL
LL
Note: ×: H or L
OE
×
H
L
H
L
HM628512CI Series
Mode
Not selected
Output disable
Read
Write
Write
VCC current
ISB, ISB1
I CC
I CC
I CC
I CC
Dout pin
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
Storage temperature
Tstg
Storage temperature under bias
Tbias
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is 7.0 V.
Value
–0.5 to +7.0
–0.5*1 to VCC + 0.3*2
1.0
–40 to +85
–55 to +125
–40 to +85
Unit
V
V
W
°C
°C
°C
Recommended DC Operating Conditions (Ta = –40 to +85°C)
Parameter
Symbol
Min
Supply voltage VCC 4.5
VSS 0
Input high voltage
VIH
2.4
Input low voltage
VIL
–0.3*1
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
Typ
5.0
0
—
—
Max
5.5
0
VCC + 0.3
0.6
Unit
V
V
V
V
5
5 Page Write Timing Waveform (2) (OE Low Fixed)
HM628512CI Series
Address
CS
WE
Dout
Din
tWC
tCW tWR
*8 tAW
tWP
tAS
tWHZ
tOW
tOH
*9
*10
tDW tDH
Valid Data
*11
11
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet HM628512CLTTI-7.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM628512CLTTI-7 | Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
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