|
|
PDF HM628512BLTTI-8 Data sheet ( Hoja de datos )
| Número de pieza | HM628512BLTTI-8 | |
| Descripción | 4 M SRAM (512-kword x 8-bit) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HM628512BLTTI-8 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
|
No Preview Available !
HM628512BI Series
4 M SRAM (512-kword × 8-bit)
ADE-203-935C (Z)
Rev. 2.0
Aug. 24, 1999
Description
The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has
realized higher density, higher performance and low power consumption by employing Hi-CMOS process
technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP.
Features
• Single 5 V supply
• Access time: 70/85 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature: –40 to +85˚C
1 page  
Function Table
WE CS
×H
HL
HL
LL
LL
Note: ×: H or L
OE
×
H
L
H
L
HM628512BI Series
Mode
Not selected
Output disable
Read
Write
Write
VCC current
ISB, ISB1
I CC
I CC
I CC
I CC
Dout pin
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
Storage temperature
Tstg
Storage temperature under bias
Tbias
Notes: 1. –3.0 V for pulse half-width ≤ 30 ns
2. Maximum voltage is 7.0 V
Value
–0.5 to +7.0
–0.5*1 to VCC + 0.3*2
1.0
–40 to +85
–55 to +125
–40 to +85
Unit
V
V
W
°C
°C
°C
Recommended DC Operating Conditions (Ta = –40 to +85°C)
Parameter
Symbol
Min
Supply voltage
VCC
VSS
Input high voltage
VIH
Input low voltage
VIL
Note: 1. –3.0 V for pulse half-width ≤ 30 ns
4.5
0
2.4
–0.3*1
Typ Max
5.0 5.5
00
— VCC + 0.3
— 0.6
Unit
V
V
V
V
5
5 Page 
Write Timing Waveform (2) (OE Low Fixed)
HM628512BI Series
Address
CS
WE
Dout
Din
tWC
tCW tWR
*8 tAW
tWP
tAS
tWHZ
tOW
tOH
*9
*10
tDW tDH
Valid Data
*11
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet HM628512BLTTI-8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HM628512BLTTI-7 | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
| HM628512BLTTI-8 | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |