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Numéro de référence | HM628512BLRRI-7 | ||
Description | 4 M SRAM (512-kword x 8-bit) | ||
Fabricant | Hitachi Semiconductor | ||
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HM628512BI Series
4 M SRAM (512-kword × 8-bit)
ADE-203-935C (Z)
Rev. 2.0
Aug. 24, 1999
Description
The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has
realized higher density, higher performance and low power consumption by employing Hi-CMOS process
technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP.
Features
• Single 5 V supply
• Access time: 70/85 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature: –40 to +85˚C
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Pages | Pages 18 | ||
Télécharger | [ HM628512BLRRI-7 ] |
No | Description détaillée | Fabricant |
HM628512BLRRI-7 | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM628512BLRRI-8 | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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