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HM628512BLRRI-7 fiches techniques PDF

Hitachi Semiconductor - 4 M SRAM (512-kword x 8-bit)

Numéro de référence HM628512BLRRI-7
Description 4 M SRAM (512-kword x 8-bit)
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HM628512BLRRI-7 fiche technique
HM628512BI Series
4 M SRAM (512-kword × 8-bit)
ADE-203-935C (Z)
Rev. 2.0
Aug. 24, 1999
Description
The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has
realized higher density, higher performance and low power consumption by employing Hi-CMOS process
technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP.
Features
Single 5 V supply
Access time: 70/85 ns (max)
Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
Completely static memory. No clock or timing strobe required
Equal access and cycle times
Common data input and output: Three state output
Directly TTL compatible: All inputs and outputs
Battery backup operation
Operating temperature: –40 to +85˚C

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