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HM628511H fiches techniques PDF

Hitachi Semiconductor - 4M High Speed SRAM (512-kword x 8-bit)

Numéro de référence HM628511H
Description 4M High Speed SRAM (512-kword x 8-bit)
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HM628511H fiche technique
HM628511H Series
4M High Speed SRAM (512-kword × 8-bit)
ADE-203-762D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 36-pin plastic SOJ.
Features
Single 5.0 V supply : 5.0 V ± 10 %
Access time 10 /12 /15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current : 180 / 160 / 140 mA (max)
TTL standby current : 70 / 60 / 50 mA (max)
CMOS standby current : 5 mA (max)
: 1.2 mA (max) (L-version)
Data retension current: 0.8 mA (max) (L-version)
Data retension voltage: 2 V (min) (L-version)
Center VCC and VSS type pinout

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