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Numéro de référence | HM6216255HLJP-10 | ||
Description | 4M high Speed SRAM (256-kword x 16-bit) | ||
Fabricant | Hitachi Semiconductor | ||
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HM6216255H Series
4M high Speed SRAM (256-kword × 16-bit)
ADE-203-763D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
• Single 5.0 Vsupply : 5.0 V ± 10 %
• Access time: 10/12/15 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 200/180/160 mA (max)
• TTL standby current: 70/60/50 mA (max)
• CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
• Data retansion current: 0.8 mA (max) (L-version)
• Data retantion voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout
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Pages | Pages 17 | ||
Télécharger | [ HM6216255HLJP-10 ] |
No | Description détaillée | Fabricant |
HM6216255HLJP-10 | 4M high Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
HM6216255HLJP-12 | 4M high Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
HM6216255HLJP-15 | 4M high Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
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