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HM6216255HCLTT-10 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Hitachi Semiconductor - 4M High Speed SRAM (256-kword x 16-bit)

شماره قطعه HM6216255HCLTT-10
شرح مفصل 4M High Speed SRAM (256-kword x 16-bit)
تولید کننده Hitachi Semiconductor 
آرم Hitachi Semiconductor 


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HM6216255HCLTT-10 شرح
HM6216255HC Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-1196 (Z)
Preliminary
Rev. 0.0
Oct. 31, 2000
Description
The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-
mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
Single 5.0 Vsupply : 5.0 V ± 10 %
Access time: 10 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 170 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
Data retansion current: 0.8 mA (max) (L-version)
Data retantion voltage: 2 V (min) (L-version)
Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.

قانون اساسیصفحه 17
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