PDF HM6216255HCJP-10 Data sheet ( Hoja de datos )

Número de pieza	HM6216255HCJP-10
Descripción	4M High Speed SRAM (256-kword x 16-bit)
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HM6216255HC Series 4M High Speed SRAM (256-kword × 16-bit) ADE-203-1196 (Z) Preliminary Rev. 0.0 Oct. 31, 2000 Description The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400- mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. Features • Single 5.0 Vsupply : 5.0 V ± 10 % • Access time: 10 ns (max) • Completely static memory  No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible  All inputs and outputs • Operating current: 170 mA (max) • TTL standby current: 40 mA (max) • CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version) • Data retansion current: 0.8 mA (max) (L-version) • Data retantion voltage: 2 V (min) (L-version) • Center VCC and VSS type pinout Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales Dept. regarding specification. 1 page HM6216255HC Series Operation Table CS OE WE LB H××× L HH× L L HL L L HL L L HH L L HH L× L L L ×LL L ×LH L ×LH Note: ×: H or L UB Mode VCC current × Standby ISB, ISB1 × Output disable ICC L Read I CC H Lower byte read ICC L Upper byte read ICC H— I CC L Write I CC H Lower byte write ICC L Upper byte write ICC H— I CC I/O1–I/O8 High-Z High-Z Output Output High-Z High-Z Input Input High-Z High-Z I/O9–I/O16 High-Z High-Z Output High-Z Output High-Z Input High-Z Input High-Z Ref. cycle — — Read cycle Read cycle Read cycle — Write cycle Write cycle Write cycle — Absolute Maximum Ratings Parameter Symbol Value Supply voltage relative to VSS Voltage on any pin relative to VSS Power dissipation Operating temperature VCC VT PT Topr –0.5 to +7.0 –0.51 to VCC + 0.52 1.0 0 to +70 Storage temperature Tstg –55 to +125 Storage temperature under bias Tbias –10 to +85 Notes: 1. VT (min) = –2.0 V for pulse width (under shoot) ≤ 6 ns. 2. VT (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns. Unit V V W °C °C °C 5 5 Page Write Timing Waveform (1) (LB, UB Controlled) Address WE3 CS3 tWC Valid address tAW tAS tWP tCW HM6216255HC Series tWR OE LB UB Dout (Lower byte) Dout (Upper byte) Din (Lower byte) Din (Upper byte) tLBW tWHZ tOHZ tUBW tOLZ tOW High impedance High impedance tDW tDH Valid data tDW tDH Valid data 11 11 Page

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Número de pieza	Descripción	Fabricantes
HM6216255HCJP-10	4M High Speed SRAM (256-kword x 16-bit)	Hitachi Semiconductor

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