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HM5259165B-A6 fiches techniques PDF

Elpida Memory - 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM

Numéro de référence HM5259165B-A6
Description 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
Fabricant Elpida Memory 
Logo Elpida Memory 





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HM5259165B-A6 fiche technique
HM5259165B-75/A6
HM5259805B-75/A6
HM5259405B-75/A6
512M LVTTL interface SDRAM
133 MHz/100 MHz
8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank
/32-Mword × 4-bit × 4-bank
PC/133, PC/100 SDRAM
E0118H10
Ver. 1.0
Apr. 6, 2001
Description
The HM5259165B is a 512-Mbit SDRAM organized as 8388608-word × 16-bit × 4 bank. The HM5259805B
is a 512-Mbit SDRAM organized as 16777216-word × 8-bit × 4 bank. The HM5259405B is a 512-Mbit
SDRAM organized as 33554432-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge
of the clock input. It is packaged in standard 54-pin plastic TSOP II.
Features
3.3 V power supply
Clock frequency: 133 MHz/100 MHz (max)
LVTTL interface
Single pulsed RAS
4 banks can operate simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential (BL = 1/2/4/8)
Interleave (BL = 1/2/4/8)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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