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PDF HN58V65AP-10 Data sheet ( Hoja de datos )
| Número de pieza | HN58V65AP-10 | |
| Descripción | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function/ RES function (HN58V66A) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HN58V65A Series
HN58V66A Series
64 k EEPROM (8-kword × 8-bit)
Ready/Busy function, RES function (HN58V66A)
ADE-203-539B (Z)
Rev. 2.0
Nov. 1997
Description
The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable
EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption
and high relisbility by employing advanced MNOS memory technology and CMOS process and
circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
• Single supply: 2.7 to 5.5 V
• Access time:
100 ns (max) at 2.7 V ≤ VCC < 4.5 V
70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V
• Power dissipation:
Active: 20 mW/MHz (typ)
Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms (max)
• Automatic page write (64 bytes): 10 ms (max)
• Ready/Busy
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
1 page  
HN58V65A Series, HN58V66A Series
Operation Table
Operation
CE OE WE RES*3
Read
Standby
VIL VIL VIH VH*1
VIH ×*2 ×
×
Write
VIL VIH VIL VH
Deselect
VIL VIH VIH VH
Write Inhibit
× × VIH ×
Data Polling
× VIL × ×
VIL VIL VIH VH
Program reset
× × × VIL
Notes: 1. Refer to the recommended DC operating conditions.
2. × : Don’t care
3. This function supported by only the HN58V66A series.
RDY/Busy
High-Z
High-Z
High-Z to VOL
High-Z
—
—
VOL
High-Z
I/O
Dout
High-Z
Din
High-Z
—
—
Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range *2
VCC
Vin
Topr
Storage temperature range
Tstg
Notes: 1. Vin min : –3.0 V for pulse width ≤ 50 ns.
2. Including electrical characteristics and data retention.
3. Should not exceed VCC + 1 V.
Value
–0.6 to +7.0
–0.5*1 to +7.0*3
0 to +70
–55 to +125
Unit
V
V
˚C
˚C
5 Page 
Read Timing Waveform
HN58V65A Series, HN58V66A Series
Address
CE
OE
WE
Data Out
RES *2
High
tACC
tCE
tOE
tRR
tOH
tDF
Data out valid
tDFR
11 Page | ||
| Páginas | Total 27 Páginas | |
| PDF Descargar | [ Datasheet HN58V65AP-10.PDF ] | |
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