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HN58V257AT-12 fiches techniques PDF

Hitachi Semiconductor - 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

Numéro de référence HN58V257AT-12
Description 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HN58V257AT-12 fiche technique
HN58V256A Series
HN58V257A Series
256k EEPROM (32-kword × 8-bit)
Ready/Busy and RES function (HN58V257A)
ADE-203-357D (Z)
Rev. 4.0
Oct. 24, 1997
Description
The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as
32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by
employing advanced MNOS memory technology and CMOS process and circuitry technology. They also
have a 64-byte page programming function to make their write operations faster.
Features
Single 3 V supply: 2.7 to 5.5 V
Access time: 120 ns max
Power dissipation:
Active: 20 mW/MHz, (typ)
Standby: 110 µW (max)
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 10 ms max
Automatic page write (64 bytes): 10 ms max
Ready/Busy (only the HN58V257A series)
Data polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
105 erase/write cycles (in page mode)
10 years data retention
Software data protection
Write protection by RES pin (only the HN58V257A series)
Industrial versions (Temperature range: – 20 to 85˚C and – 40 to 85˚C) are also available.

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