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HN58S256AT-20 fiches techniques PDF

Hitachi Semiconductor - 256 k EEPROM (32-kword x 8-bit)

Numéro de référence HN58S256AT-20
Description 256 k EEPROM (32-kword x 8-bit)
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HN58S256AT-20 fiche technique
HN58S256A Series
256 k EEPROM (32-kword × 8-bit)
ADE-203-692B (Z)
Rev. 2.0
Nov. 1997
Description
The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-
word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry
technology. It also has a 64-byte page programming function to make the write operations faster.
Features
Single supply: 2.2 to 3.6 V
Access time: 150 ns (max)/200 ns (max)
Power dissipation:
Active: 10 mW/MHz, (typ)
Standby: 36 µW (max)
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 15 ms (max)
Automatic page write (64 bytes): 15 ms (max)
Data polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
105 erase/write cycles (in page mode)
10 years data retention
Software data protection
Industrial versions (Temperatur range:–40 to 85˚C) are also available.

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