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PDF HN58C65FP-25 Data sheet ( Hoja de datos )
| Número de pieza | HN58C65FP-25 | |
| Descripción | 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HN58C65 Series
8192-word × 8-bit Electrically Erasable and Programmable CMOS
ROM
ADE-203-374A (Z)
Rev. 1.0
Apr. 12, 1995
Description
The Hitachi HN58C65 is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It
realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS
memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming
function to make its erase and write operations faster.
Features
• Single 5 V Supply
• On chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms max
• Automatic page write (32 byte): 10 ms max
• Fast access time: 250 ns max
• Low power dissipation: 20 mW/MHz typ (Active)
2.0 mW typ (Standby)
• Data polling and Ready/Busy
• Data protection circuity on power on/power off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 year data retention
Ordering Information
Type No.
Access Time
Package
HN58C65P-25
250 ns
600 mil 28 pin plastic DIP (DP-28)
HN58C65FP-25
250 ns
28 pin plastic SOP*1 (FP-28D/DA)
Note: 1. T is added to the end of the type no. for a SOP of 3.0 mm (max) thickness.
1 page  
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%)
Parameter
Symbol Min Typ Max
Input leakage current
I LI
——2
Unit
µA
Output leakage current
I LO
—
—
2
µA
VCC current (Standby)
I CC1
—
—
1
VCC current (Active)
I CC2
—
—
8
mA
mA
— — 25 mA
Input low voltage
VIL –0.3*1
Input high voltage
VIH 2.2
Output low voltage
VOL —
Output high voltage
VOH 2.4
Note: 1. –1.0 V for pulse width ≤ 50 ns
—
—
—
—
0.8
VCC + 1
0.4
—
V
V
V
V
HN58C65 Series
Test Conditions
VCC = 5.5 V
Vin = 5.5 V
VCC = 5.5 V
Vout = 5.5/0.4 V
CE = VIH, CE = VCC
Iout = 0 mA
Duty = 100%
Cycle = 1 µs at
VCC = 5.5 V
Iout = 0 mA
Duty = 100%
Cycle = 250 ns at
VCC = 5.5 V
IOL = 2.1 mA
IOH = –400 µA
Capacitance (Ta = 25°C, f = 1 MHz)
Parameter
Symbol Min Typ Max Unit
Input capacitance*1 Cin — — 6
pF
Output capacitance*1
Cout
—
—
12
pF
Note: 1. This parameter is periodically sampled and not 100% tested.
Test Conditions
Vin = 0 V
Vout = 0 V
AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%)
Test Conditions
• Input pulse levels: 0.4 V to 2.4 V
• Input rise and fall time: ≤ 20 ns
• Output load: 1TTL gate + 100 pF
• Reference levels for measuring timing: 0.8 V and 2 V
5
5 Page 
Page Write Timing Waveform (2) (CE Controlled)
Address
A5 to A12
Address
A0 to A4
CE
WE
OE
Din
RDY/Busy
tAS tAH
tCW
tDL
tWS tWH
tBLC
tOES
tDS
High-Z
tDH
tDB
HN58C65 Series
tBL
tWC
tOEH
tDW
High-Z
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HN58C65FP-25.PDF ] | |
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