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HN29V51211 fiches techniques PDF

Hitachi Semiconductor - 512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)

Numéro de référence HN29V51211
Description 512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HN29V51211 fiche technique
HN29V51211 Series
512M AND type Flash Memory
More than 32,113-sector (542,581,248-bit)
ADE-203-1221 (Z)
Preliminary
Rev. 0.0
Sep. 20, 2000
Description
The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211 are more than 32,113 (98% of all
sector address) and less than 32,768 sectors.
Features
On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
Organization
AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.

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