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Toshiba Semiconductor - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Numéro de référence HN1K04FU
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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HN1K04FU fiche technique
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K04FU
HN1K04FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
· High input impedance and extremely low drive current.
· Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.8 to 2.5 V
· Switching speed is fast.
· Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: TOTAL rating
Symbol
VDS
VGSS
ID
PD (Note)
Tch
Tstg
Rating
50
10
50
200
150
-55 to 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg
2-2J1C
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
ïYfsï
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = 10 V, VDS = 0 V
ID = 100 mA, VGS = 0 V
VDS = 50V, VGS = 0 V
VDS = 5V, ID = 0.1 mA
VDS = 5V, ID = 10 mA
ID = 10 mA, VGS = 4.0 V
VDS = 5 V, VGS=0 V, f = 1 MHz
VDS = 5 V, VGS=0 V, f = 1 MHz
VDS = 5 V, VGS=0 V, f = 1 MHz
VDD = 5 V, ID = 10 mA,
VGS = 0 to 4.0 V
VDD = 5 V, ID = 10 mA,
VGS = 0 to 4.0 V
Min Typ. Max Unit
¾ ¾ 1 mA
50 ¾ ¾ V
¾ ¾ 1 mA
0.8 ¾ 2.5 V
20 ¾ ¾ mS
¾ 20 50 W
¾ 6.3 ¾ pF
¾ 1.3 ¾ pF
¾ 5.7 ¾ pF
¾ 0.11 ¾
¾ 0.15 ¾
ms
1 2002-01-16

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