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PDF HMJE13003T Data sheet ( Hoja de datos )
| Número de pieza | HMJE13003T | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002.05.08
Page No. : 1/3
HMJE13003T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE13003T is designed for high voltage. High speed switching
inductive circuits and amplifier applications.
Features
• High Speed Switching
• Low Saturation Voltage
• High Reliability
TO-126
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 3.5 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 8 V
IC Collector Current (DC) ...................................................................................................... 1 A
IC Collector Current (Pulse) .................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
Min.
600
400
8
-
-
-
-
-
-
10
10
6
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
0.8
0.9
1.2
1.8
50
-
-
Unit Test Conditions
V IC=1mA, IE=0
V IC=10mA, IB=0
V IE=1mA, IC=0
uA VCB=600V, IE=0
uA VBE=9V, IC=0
V IC=0.1A, IB=10mA
V IC=0.3A, IB=30mA
V IC=0.1A, IB=10mA
V IC=0.3A, IB=30mA
IC=0.3A, VCE=5V
IC=0.5A, VCE=5V
IC=1A, VCE=5V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMJE13003T
HSMC Product Specification
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet HMJE13003T.PDF ] | |
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