DataSheetWiki


HMJE13003D fiches techniques PDF

Hi-Sincerity Mocroelectronics - NPN EPITAXIAL PLANAR TRANSISTOR

Numéro de référence HMJE13003D
Description NPN EPITAXIAL PLANAR TRANSISTOR
Fabricant Hi-Sincerity Mocroelectronics 
Logo Hi-Sincerity Mocroelectronics 





1 Page

No Preview Available !





HMJE13003D fiche technique
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200207
Issued Date : 1993.04.12
Revised Date : 2002.05.08
Page No. : 1/4
HMJE13003D
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High Voltage, High Speed Power Switch
Switch Regulators
PWM Inverters and Motor Controls
Solenoid and Relay Drivers
Deflection Circuits
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
Maximum Voltages and Currents (Ta=25°C)
VCEX Collector to Emitter Voltage .................................................................................... 700 V
VCEO Collector to Emitter Voltage .................................................................................... 400 V
VEBO Emitter to Base Voltage .............................................................................................. 9 V
IC Collector Current ........................................................................................ Continuous 1.5 A
IB Base Current ............................................................................................. Continuous 0.75 A
Characteristics (Ta=25°C)
Symbol
Min. Typ.
BVCEX
BVCEO
IEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
700
400
-
-
-
-
-
-
-
8
5
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
1
500
1
3
1
1.2
40
25
Unit Test Conditions
V IC=1mA, VBE(off)=1.5V
V IC=10mA
mA VEB=9V
mA VCE=700V, VBE(off)=1.5V
mV IC=0.5A, IB=0.1A
V IC=1A, IB=0.25A
V IC=1.5A, IB=0.5A
V IC=0.5A, IB=0.1A
V IC=1A, IB=0.25A
IC=0.5A, VCE=2V
IC=1A, VCE=2V
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMJE13003D
HSMC Product Specification

PagesPages 4
Télécharger [ HMJE13003D ]


Fiche technique recommandé

No Description détaillée Fabricant
HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche