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PDF HMC499 Data sheet ( Hoja de datos )
| Número de pieza | HMC499 | |
| Descripción | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 21 - 32 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0903
MICROWAVE CORPORATION
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
1 Typical Applications
Features
The HMC499 is ideal for use as a power
+33 dBm Output IP3
amplifier for:
+24 dBm P1dB
• Point-to-Point Radios
Gain: 16 dB
• Point-to-Multi-Point Radios
Supply Voltage: +5.0 V
• VSAT
50 Ohm Matched Input/Output
• Military & Space
2.11 mm x 1.46 mm x 0.1 mm
Functional Diagram
General Description
The HMC499 is a high dynamic range GaAs
PHEMT MMIC Medium Power Amplifier which
operates between 21 and 32 GHz. The HMC499
provides 16 dB of gain, and an output power of
+24 dBm at 1 dB compression from a +5.0 V
supply voltage. The HMC499 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs)
due to its small size. All data is with the chip in
a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
1 - 120
Electrical Specifications, TA = +25° C, Vdd = 5V, Idd = 200 mA*
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
21.0 - 24.0
24.0 - 28.0
28.0 - 32.0
GHz
Gain
13 16
12.5
15.5
12 15
dB
Gain Variation Over Temperature
0.03 0.04
0.03 0.04
0.03 0.04 dB/ °C
Input Return Loss
10 5
8 dB
Output Return Loss
13 12 12 dB
Output Power for 1 dB Compression (P1dB)
20 23
20 24
21 24.5
dBm
Saturated Output Power (Psat)
24 24.5 25 dBm
Output Third Order Intercept (IP3)
30 33 33.5 dBm
Noise Figure
6.5 5.0 4.5 dB
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
200
200
200 mA
* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.0903
MICROWAVE CORPORATION
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
1 Pad Descriptions
Pin Number
Function
Description
1
RF IN
This pad is AC coupled and matched to 50 Ohms from
21 - 32 GHz.
Interface Schematic
2-4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.01 µF are required.
5
RF OUT
This pad is AC coupled and matched to 50 Ohms from
21 - 32 GHz.
Gate control for amplifier. Adjust to achieve Idd of 200 mA.
Please follow “MMIC Amplifier Biasing Procedure”
6 Vgg Application Note. External bypass capacitors of 100 pF
and 0.01 µF are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
1 - 124
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC499.PDF ] | |
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