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PDF HMC498 Data sheet ( Hoja de datos )
| Número de pieza | HMC498 | |
| Descripción | GaAs PHEMT MMIC POWER AMPLIFIER/ 17 - 24 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0903
MICROWAVE CORPORATION
HMC498
GaAs PHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
1 Typical Applications
Features
The HMC498 is ideal for use as a power
+34 dBm Output IP3
amplifier for:
Saturated Power: +27 dBm @ 25% PAE
• Point-to-Point Radios
Gain: 24 dB
• Point-to-Multi-Point Radios
Supply Voltage: +5.0 V
• VSAT
50 Ohm Matched Input/Output
• Military & Space
2.38 mm x 1.46 mm x 0.1 mm
Functional Diagram
General Description
The HMC498 is a high dynamic range GaAs
PHEMT MMIC Power Amplifier which operates
between 17 and 24 GHz. The HMC498 provides
24 dB of gain, +27 dBm of saturated power and
25% PAE from a +5.0 V supply voltage. The
HMC498 amplifier can easily be integrated into
Multi-Chip-Modules (MCMs) due to its small size.
All data is with the chip in a 50 Ohm test fixture
connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
1 - 112
Electrical Specifications, TA = +25° C, Vdd = 5V, Idd = 250 mA*
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
17.0 - 19.0
19.0 - 22.0
22.0 - 24.0
GHz
Gain
20 23
21 24
20 23
dB
Gain Variation Over Temperature
0.03 0.04
0.03 0.04
0.03 0.04 dB/ °C
Input Return Loss
11 11
8 dB
Output Return Loss
20 18 15 dB
Output Power for 1 dB Compression (P1dB)
20 23.5
22 25
21 24
dBm
Saturated Output Power (Psat)
27
26.5
25.5 dBm
Output Third Order Intercept (IP3)
34 34 34 dBm
Noise Figure
3.5 4.0 4.5 dB
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
250
250
250 mA
* Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.0903
MICROWAVE CORPORATION
HMC498
GaAs PHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
1 Pad Descriptions
Pin Number
Function
Description
1
RF IN
This pad is AC coupled and matched to 50 Ohms from
17 - 24 GHz.
Interface Schematic
2-4
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.01 µF are required.
5
RF OUT
This pad is AC coupled and matched to 50 Ohms from
17 - 24 GHz.
Gate control for amplifier. Adjust to achieve Idd of 250 mA.
Please follow “MMIC Amplifier Biasing Procedure”
6 Vgg Application Note. External bypass capacitors of 100 pF
and 0.01 µF are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
1 - 116
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC498.PDF ] | |
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