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PDF HMC488MS8G Data sheet ( Hoja de datos )

Número de pieza HMC488MS8G
Descripción GaAs MMIC MIXER W/ INTEGRATED LO AMPLIFIER/ 4.0 - 7.0 GHz
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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v00.00503
HMC488MS8G
MICROWAVE CORPORATION
GaAs MMIC MIXER W/ INTEGRATED
LO AMPLIFIER, 4.0 - 7.0 GHz
Typical Applications
The HMC488MS8G is ideal for:
• UNII, ISM & WLAN
• Point to Point/Multi-Point Radios
• VSAT
12
Functional Diagram
Features
Conversion Loss: 7 dB
Integrated LO Amplifier: 0 to +6 dBm Drive
Input IP3: +15 dBm
Single Positive Supply: 5V @ 46 mA
General Description
The HMC488MS8G is an ultra miniature double-
balanced mixer with an integrated LO amplifier
in an 8 lead plastic SMT MSOP covering 4 - 7
GHz. This passive MMIC mixer integrates a GaAs
Schottky diode quad, transformer baluns and a LO
buffer on a single chip yielding a low conversion
loss of 7 dB coupled with an input IP3 of +15 dBm.
The LO buffer amplifier can be driven from 0 to +6
dBm and requires a single supply of +5V @ 46
mA. The device can be used as an upconverter,
downconverter or bi-phase (de)modulator for a
variety of point-to-point/multipoint, VSAT, telemetry
or broadband WLAN applications.
Electrical Specifications, TA = +25° C, IF= 100 MHz, Vdd= 5V
Parameter
Frequency Range, RF & LO
LO = +2 dBm
Min. Typ. Max.
4.0 - 7.0
LO = 0 dBm
Min. Typ.
5.0 - 6.0
Frequency Range, IF
DC - 2.5
DC - 2.5
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
1 dB Gain Compression (Input)
Supply Current (Idd)
7 9.5
8
78
25 30
27 32
16 20
20 25
15 15
58
69
46 46
Max.
10.5
Units
GHz
GHz
dB
dB
dB
dB
dBm
dBm
mA
12 - 278
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

1 page




HMC488MS8G pdf
MICROWAVE CORPORATION
v00.0503
HMC488MS8G
GaAs MMIC MIXER W/ INTEGRATED
LO AMPLIFIER, 4.0 - 7.0 GHz
Outline Drawing
12
Pin Descriptions
Pin Number
Function
1 LO
2, 6, 7
GND
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3 LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO THE PCB RF GROUND
Description
This pin is AC coupled & matched to 50 Ohm
from 4.0 to 7.0 GHz.
This pin must be connected to RF ground.
Interface Schematic
3, 4
Vdd
These pins are power supply for LO amp.
An external RF bypass capacitor (10,000 pF) is required.
12 - 282
This pin is DC coupled. For applications not requiring
operation to DC this port should be DC blocked externally
5
IF Port
using a series capacitor. Choose value of capacitor to pass
IF frequency desired. For operation to DC, this pin must not
sink/source more than 40 mA of current or failure may result.
8 RF Port
This pin is DC coupled & matched to 50 Ohm
from 4.0 to 7.0 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

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