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PDF HMC479ST89 Data sheet ( Hoja de datos )
| Número de pieza | HMC479ST89 | |
| Descripción | SiGe HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
8 - 274
Typical Applications
The HMC479ST89 is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
Features
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Industry Standard SOT89 Package
General Description
The HMC479ST89 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 5 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as a
cascadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +20 dBm output power.
The HMC479ST89 offers 15 dB of gain with a +33
dBm output IP3 at 850 MHz while requiring only 75
mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity
to normal process variations and excellent gain
stability over temperature while requiring a minimal
number of external bias components.
Electrical Specifications, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25° C
Parameter
Min. Typ.
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
12.5
11.5
10.5
9.5
8.5
15
13.5
12.5
11.5
10.5
Gain Variation Over Temperature
DC - 5.0 GHz
0.008
Input Return Loss
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
12
16
18
22
Output Return Loss
DC - 1.0 GHz
1.0 - 5.0 GHz
20
22
Reverse Isolation
DC - 5.0 GHz
18
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz 15 18
1.0 - 2.0 GHz 13 16
2.0 - 3.0 GHz 11 14
3.0 - 4.0 GHz 10 13
4.0 - 5.0 GHz 8 11
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
33
30
25
23
Noise Figure
DC - 3.0 GHz
3.0 - 5.0 GHz
4.0
4.5
Supply Current (Icq)
75
Note: Data taken with broadband bias tee on device output.
Max.
0.012
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
1 page  
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8 Pin Descriptions
Pin Number
Function
1 RFIN
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Application Circuit
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
5V
13 Ω
1/8 W
6V
27 Ω
1/4 W
8V
51 Ω
1/2 W
10V
82 Ω
1/2 W
12V
110 Ω
1W
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 µF
900
56 nH
100 pF
Frequency (MHz)
1900
2200
2400
18 nH
18 nH
15 nH
100 pF
100 pF
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
8 - 278
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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| PDF Descargar | [ Datasheet HMC479ST89.PDF ] | |
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