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PDF HMC479MP86 Data sheet ( Hoja de datos )
| Número de pieza | HMC479MP86 | |
| Descripción | SiGe HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0603
MICROWAVE CORPORATION
HMC479MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
8 - 248
Typical Applications
The HMC479MP86 is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
P1dB Output Power: +18.5 dBm
Gain: 15 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
General Description
The HMC479MP86 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 5 GHz. This Micro-P packaged
amplifier can be used as a cascadable 50 Ohm RF/
IF gain stage as well as a LO or PA driver with up to
+21 dBm output power. The HMC479MP86 offers
15 dB of gain with a +35dBm output IP3 at 850 MHz
while requiring only 72 mA from a single positive
supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifications, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25° C
Parameter
Min. Typ.
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
12.5
11.5
10.5
9
7.5
14.5
13
12
11
9.5
0.008
12
16
18
15
Output Return Loss
Reverse Isolation
DC - 1.0 GHz
1.0 - 3.5 GHz
3.5 - 5.0 GHz
DC - 5.0 GHz
18
25
15
18
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
16 18.5
13 17
11 14
9 12
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
DC - 2.0 GHz
2.0 - 5.0 GHz
34
32
28
25
4.0
4.8
Supply Current (Icq)
72
Note: Data taken with broadband bias tee on device output.
Max.
0.012
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
1 page  
v00.0603
MICROWAVE CORPORATION
HMC479MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8 Pin Descriptions
Pin Number
Function
1 RFIN
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
3 RFOUT
2, 4 GND
RF output and DC Bias (Vcc) for the output stage.
These pins must be connected to RF/DC ground.
Application Circuit
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 72 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
5V
13 Ω
1/8 W
6V
27 Ω
1/4 W
8V
51 Ω
1/2 W
10V
82 Ω
1/2 W
12V
110 Ω
1W
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 µF
900
56 nH
100 pF
Frequency (MHz)
1900
2200
2400
18 nH
18 nH
15 nH
100 pF
100 pF
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
8 - 252
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
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| PDF Descargar | [ Datasheet HMC479MP86.PDF ] | |
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