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PDF HMC473MS8 Data sheet ( Hoja de datos )
| Número de pieza | HMC473MS8 | |
| Descripción | GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR/ 0.45 - 2.2 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.1103
MICROWAVE CORPORATION
HMC473MS8
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
9
9 - 110
Typical Applications
Features
The HMC473MS8 is ideal for:
Single Positive Voltage Control: 0 to +3V
• Cellular, UMTS/3G Infrastructure
High Attenuation Range: 48 dB @ 0.9 GHz
• Portable Wireless
High P1dB Compression Point: +15 dBm
• GPS
Ultra Small Package: MSOP8
Functional Diagram
Replaces HMC173MS8
General Description
The HMC473MS8 is an absorptive voltage
variable attenuator in an 8-lead MSOP package.
The device operates with a +3.3V supply voltage
and a 0 to +3V control voltage. Unique features
include a high dynamic attenuation range of up to
48 dB and excellent power handling performance
through all attenuation states. The HMC473MS8
is ideal for operation in wireless applications from
0.45 to 1.6 GHz. Operation from 1.7 to 2.2 GHz is
possible with a reduced maximum attenuation of 29
to 32 dB. The HMC473MS8 can be used with an
external driver circuit for improved control voltage
linearity vs. attenuation.
Electrical Specifications, TA = +25° C, Vdd = +3.3 Vdc, 50 Ohm System
Parameter
Min.
Typ.
Max.
Units
Insertion Loss (Min. Atten.)
(Vctl = 0.0 Vdc)
0.45 - 0.8 GHz
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
2.0 - 2.2 GHz
1.8 2.2 dB
1.9 2.3 dB
2.4 2.9 dB
2.8 3.3 dB
3.0 3.5 dB
Attenuation Range
(Vctl = 0 to +3 V)
0.45 - 0.8 GHz
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
2.0 - 2.2 GHz
34 39
43 48
32 37
27 32
24 29
dB
dB
dB
dB
dB
Return Loss
(Vctl = 0 to +3 V)
0.45 - 0.8 GHz
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
2.0 - 2.2 GHz
15
14 dB
11 dB
10 dB
9
Input Power for 0.1 dB Compression
(0.9 GHz)
Min Atten.
Atten. >2.0
20 dBm
5.5 dBm
Input Power for 1.0 dB Compression
(0.9 GHz)
Min Atten.
Atten. >2.0
24 28
11 15
dBm
dBm
Input Third Order Intercept
(0.9 GHz, Two-tone Input Power = +5.0 dBm Each Tone)
Min Atten.
Atten. >2.0
47 dBm
20 dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
0.45 - 2.2 GHz
1.3 µS
1.5 µS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.1103
MICROWAVE CORPORATION
HMC473MS8
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
Outline Drawing
9
Pin Descriptions
Pin Number
Function
1, 8 RF1, RF2
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Description
These pins are DC coupled and matched to 50 Ohms.
DC blocking capacitors are required. 330pF capacitors are
supplied on evaluation board.
Interface Schematic
2, 7 GND
Pins must connect to RF ground.
9 - 114
3 Vctl
Control voltage
4, 5
N/C
No Connection. These pins may be connected to RF ground.
Performance will not be affected.
6 Vdd
Supply Voltage.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC473MS8.PDF ] | |
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