DataSheetWiki


HMC464 fiches techniques PDF

Hittite Microwave Corporation - GaAs PHEMT MMIC POWER AMPLIFIER/ 2.0 - 20.0 GHz

Numéro de référence HMC464
Description GaAs PHEMT MMIC POWER AMPLIFIER/ 2.0 - 20.0 GHz
Fabricant Hittite Microwave Corporation 
Logo Hittite Microwave Corporation 





1 Page

No Preview Available !





HMC464 fiche technique
v02.0704
MICROWAVE CORPORATION
HMC464
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
1 Typical Applications
The HMC464 wideband driver is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
Features
+26 dBm P1dB Output Power
Gain: 16 dB
+30 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
General Description
The HMC464 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between 2 and
20 GHz. The amplifier provides 16 dB of gain, +30
dBm Output IP3 and +26 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is excellent from
2 - 18 GHz making the HMC464 ideal for EW,
ECM and radar driver amplifier applications. The
HMC464 amplifier I/O’s are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
1 - 106
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
Min.
14
23.5
Typ.
2.0 - 6.0
16
±0.25
0.02
15
14
26.5
28
32
4.0
Max.
0.03
290
Min. Typ. Max.
6.0 - 18.0
13 16
±0.5
0.02
0.03
17
12
22 26
27.5
30
4.0
290
Min. Typ. Max.
18.0 - 20.0
11 14
± 0.75
0.03
0.04
13
11
19 22
24.5
24
6.0
290
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

PagesPages 6
Télécharger [ HMC464 ]


Fiche technique recommandé

No Description détaillée Fabricant
HMC460 GaAs PHEMT MMIC LOW NOISE AMPLIFIER/ DC - 20.0 GHz Hittite Microwave Corporation
Hittite Microwave Corporation
HMC460LC5 GaAs pHEMT MMIC LOW NOISE AMPLIFIER Analog Devices
Analog Devices
HMC461LP3 InGaP HBT 1 Watt High IP3 AMPLIFIER Hittite Microwave Corporation
Hittite Microwave Corporation
HMC461LP3E InGaP HBT 1 Watt High IP3 AMPLIFIER Analog Devices
Analog Devices

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche