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What is HUFA76419D3S?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "20A/ 60V/ 0.043 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs".


HUFA76419D3S Datasheet PDF - Fairchild Semiconductor

Part Number HUFA76419D3S
Description 20A/ 60V/ 0.043 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs
Manufacturers Fairchild Semiconductor　
Logo Fairchild Semiconductor Logo　


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Data Sheet
HUFA76419D3, HUFA76419D3S
December 2001
20A, 60V, 0.043 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFETs
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
HUFA76419D3
DRAIN
(FLANGE)
GATE
SOURCE
HUFA76419D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.037Ω, VGS = 10V
- rDS(ON) = 0.043Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76419D3
TO-251AA
76419D
HUFA76419D3S
TO-252AA
76419D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76419D3ST
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA76419D3, HUFA76419D3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC = 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous
Continuous
(TC
(TC
=
=
100oC,
100oC,
VGS
VGS
=
=
5V) .
4.5V)
......
(Figure
..
2)
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
60
60
±16
20
20
20
19
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
..
75
0.5
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA76419D3, HUFA76419D3S Rev. B

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HUFA76419D3S equivalent
HUFA76419D3, HUFA76419D3S
Typical Performance Curves (Continued)
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
1.2
ID = 250µA
1.1
1.0
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2000
1000
CISS = CGS + CGD
COSS ≅ CDS + CGD
100
20
0.1
VGS = 0V, f = 1MHz
CRSS = CGD
1.0 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 30V
8
6
4 WAVEFORMS IN
DESCENDING ORDER:
ID = 20A
2 ID = 10A
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
300
VGS = 4.5V, VDD = 30V, ID = 19A
250
tr
200
150
100
50
0
0
tf
td(OFF)
td(ON)
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
180
VGS = 10V, VDD = 30V, ID = 20A
150
td(OFF)
120
90
60
tf
tr
30
td(ON)
0
0 10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HUFA76419D3, HUFA76419D3S Rev. B


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Featured Datasheets

Part NumberDescriptionMFRS
HUFA76419D3The function is 20A/ 60V/ 0.043 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs. Fairchild SemiconductorFairchild Semiconductor
HUFA76419D3SThe function is 20A/ 60V/ 0.043 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs. Fairchild SemiconductorFairchild Semiconductor

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