|
|
PDF HUFA76413DK8T Data sheet ( Hoja de datos )
| Número de pieza | HUFA76413DK8T | |
| Descripción | N-Channel Logic Level UltraFET Power MOSFET 60V/ 4.8A/ 56m | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HUFA76413DK8T (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
January 2003
HUFA76413DK8T
N-Channel Logic Level UltraFET® Power MOSFET
60V, 4.8A, 56mΩ
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET® process. This advanced pro-
cess technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding perfor-
mance. This device is capable of withstanding high energy
in the avalanche mode and the diode exhibits very low re-
verse recovery time and stored charge. It was designed for
use in applications where power efficiency is important,
such as switching regulators, switching convertors, motor
drivers, relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
Applications
• Motor and Load Control
• Powertrain Management
Features
• 150°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V
• Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V
D1 (8) D1 (7)
D2 (6) D2 (5)
1
SO-8
S1 (1) G1 (2)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 5V)
Continuous (TC = 125oC, VGS = 5V, RθJA = 228oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
S2 (3) G2 (4)
Ratings
60
±16
5.1
4.8
1
Figure 4
260
2.5
0.02
-55 to 150
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJA
RθJA
RθJA
Thermal Resistance Junction to Ambient SO-8 (Note 2)
Thermal Resistance Junction to Ambient SO-8 (Note 3)
Thermal Resistance Junction to Ambient SO-8 (Note 4)
50 oC/W
191 oC/W
228 oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
Rev. B
1 page  
Typical Characteristics TA = 25°C unless otherwise noted
1.2 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0 1.1
0.8 1.0
0.6
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
2000
1000
CISS = CGS + CGD
10
VDD = 30V
8
CRSS = CGD
100
COSS ≅ CDS + CGD
10
0.1
VGS = 0V, f = 1MHz
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
6
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 4.8A
ID = 1A
5 10 15
Qg, GATE CHARGE (nC)
20
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
150
VGS = 5V, VDD = 30V, ID = 1A
100
td(OFF)
tf
50 tr
td(ON)
0
0
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
Figure 15. Switching Time vs Gate Resistance
©2003 Fairchild Semiconductor Corporation
Rev. B
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
Bottomless™
FACT Quiet Series™
FAST®
CoolFET™
FASTr™
CROSSVOLT™ FRFET™
DOME™
GlobalOptoisolator™
EcoSPARK™
E2CMOS™
EnSigna™
GTO™
HiSeC™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HUFA76413DK8T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HUFA76413DK8T | N-Channel Logic Level UltraFET Power MOSFET 60V/ 4.8A/ 56m | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |