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HUFA76407P3 fiches techniques PDF

Fairchild Semiconductor - 12A/ 60V/ 0.107 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Numéro de référence HUFA76407P3
Description 12A/ 60V/ 0.107 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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HUFA76407P3 fiche technique
Data Sheet
HUFA76407P3
December 2001
12A, 60V, 0.107 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Symbol
DRAIN
(FLANGE)
HUFA76407P3
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.092Ω, VGS = 10V
- rDS(ON) = 0.107Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76407P3
TO-220AB
76407P
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA76407P3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
Continuous
(TC
(TC
(TC
(TC
=
=
=
=
1122335555ooCCooCC,, ,,VVVVGGGGSSSS====150V54VV.)5))V(.)F..(i..gF..uig..rue..r..e2..)2.. )...
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ID
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
60
60
±16
12
13
6
6
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTE:
1. TJ = 25oC to 150oC.
38
0.25
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B

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