HUFA75652G3 Datasheet PDF - Fairchild Semiconductor
| Part Number | HUFA75652G3 | |
| Description | 75A/ 100V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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Data Sheet
HUFA75652G3
December 2001
75A, 100V, 0.008 Ohm, N-Channel
UltraFET® Power MOSFET
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Symbol
HUFA75652G3
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.008Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75652G3
TO-247
75652G
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA75652G3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±20
75
75
Figure 4
Figure 6
V
V
V
A
A
Power Dissipation (Note 2)
Derate Above 25oC . . . .
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PD
..
515
3.44
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75652G3 Rev. B
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HUFA75652G3
Typical Performance Curves (Continued)
1.2
ID = 250µA
1.1
20000
10000
CRSS = CGD
CISS = CGS + CGD
1000
1.0 COSS ≅ CDS + CGD
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 50V
8
VGS = 0V, f = 1MHz
100
0.1
1.0
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 75A
ID = 35A
0
0 50 100 150 200 250
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUFA75652G3 Rev. B
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