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PDF HUFA75337P3 Data sheet ( Hoja de datos )
| Número de pieza | HUFA75337P3 | |
| Descripción | 75A/ 55V/ 0.014 Ohm/ N-Channel UltraFET Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
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HUFA75333G3, HUFA75333P3, HUFA75333S3S
Data Sheet
December 2001
66A, 55V, 0.016 Ohm. N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching convertors, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75333.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75333G3
TO-247
75333G
HUFA75333P3
TO-220AB
75333P
HUFA75333S3S
TO-263AB
75333S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75333S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 66A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B
1 page  
HUFA75333G3, HUFA75333P3, HUFA75333S3S
Typical Performance Curves (Continued)
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 66A
2.0
1.2
1.0
VGS = VDS, ID = 250µA
1.5 0.8
1.0 0.6
0.5
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2000
1500
1000
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
COSS
500
CRSS
0
0 10 20 30 40 50 60
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
VDD = 30V
8
6
4 WAVEFORMS IN
DESCENDING ORDER:
ID = 66A
2 ID = 50A
ID = 33A
ID = 16A
0
0 10 20 30 40
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUFA75337P3.PDF ] | |
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