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PDF HUFA75309D3 Data sheet ( Hoja de datos )
| Número de pieza | HUFA75309D3 | |
| Descripción | 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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HUFA75309P3, HUFA75309D3, HUFA75309D3S
Data Sheet
December 2001
19A, 55V, 0.070 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75309.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75309P3
TO-220AB
75309P
HUFA75309D3
TO-251AA
75309D
HUFA75309D3S
TO-252AA
75309D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA75309D3ST.
Packaging
JEDEC STYLE TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 19A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B
1 page  
HUFA75309P3, HUFA75309D3, HUFA75309D3S
Typical Performance Curves (Continued)
2.5
PULSE DURATION = 80µs, VGS = 10V, ID = 19A
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
1.2
1.0
0.8
VGS = VDS, ID = 250µA
0.5
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.6
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400
CISS
CRSS = CGD
COSS ≈ CDS + CGD
300
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 30V
8
200
100
0
0
COSS
CRSS
10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4 WAVEFORMS IN
DESCENDING ORDER:
ID = 19A
2 ID = 15A
ID = 10A
ID = 5A
0
0 3 6 9 12
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUFA75309D3.PDF ] | |
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