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HUF76619D3 fiches techniques PDF

Intersil Corporation - 18A/ 100V/ 0.087 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Numéro de référence HUF76619D3
Description 18A/ 100V/ 0.087 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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HUF76619D3 fiche technique
Data Sheet
HUF76609D3, HUF76609D3S
December 2001
10A, 100V, 0.165 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
HUF76609D3
HUF76609D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.160Ω, VGS = 10V
- rDS(ON) = 0.165Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.Fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76609D3
TO-251AA
76609D
HUF76609D3S
TO-252AA
76609D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76609D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF76609D3, HUF76609D3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
Continuous
(TC
(TC
(TC
(TC
=
=
=
=
11220055o00oCCooCC,, V,,VVVGGGGSSSS====15054VVV.)5))V(..)F..(i..gF..uig..rue..r..2e..)2.. )...
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ID
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±16
10
10
7
7
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and StorageTemperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTE:
1. TJ = 25oC to 150oC.
49
0.327
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76609D3, HUF76609D3S Rev. B

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