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Número de pieza | HUF76443S3S | |
Descripción | 75A/ 60V/ 0.0095 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
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No Preview Available ! Data Sheet
HUF76432P3, HUF76432S3S
December 2001
55A, 60V, 0.019 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF76432P3
GATE
SOURCE
HUF76432S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.017Ω, VGS = 10V
- rDS(ON) = 0.019Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76432P3
TO-220AB
76432P
HUF76432S3S
TO-263AB
76432S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76432S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF76432P3, HUF76432S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous
Continuous
Continuous
(TC=
(TC=
(TC=
112005o00CooCC, ,,VVVGGGSSS===1045.VV5))V().F.(iFg.ui.gr.ue.re2. ).2..)..
.
.
.
.
.
.
.......
.......
.......
....
....
....
.............
.............
.............
....
....
....
.....
.....
.....
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
60
60
±16
55
59
39
37
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
130
0.87
-55 to 175
300
260
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76432P3, HUF76432S3S Rev. B
1 page HUF76432P3, HUF76432S3S
Typical Performance Curves (Continued)
1.2
VGS = VDS, ID = 250µA
1.0
0.8
1.2
ID = 250µA
1.1
1.0
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4000
CISS = CGS + CGD
1000
COSS ≅ CDS + CGD
100
VGS = 0V, f = 1MHz
30
0.1
1.0
CRSS = CGD
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
750
VGS = 4.5V, VDD = 30V, ID = 37A
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 30V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 55A
ID = 37A
ID = 18A
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
300
VGS = 10V, VDD = 30V, ID = 59A
500
tr
250
tf
td(OFF)
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
200
tf
tr
100
td(OFF)
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HUF76432P3, HUF76432S3S Rev. B
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HUF76443S3S.PDF ] |
Número de pieza | Descripción | Fabricantes |
HUF76443S3S | 75A/ 60V/ 0.0095 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET | Fairchild Semiconductor |
HUF76443S3S | 75A/ 60V/ 0.0095 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET | Intersil Corporation |
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