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PDF HUF76139S3S Data sheet ( Hoja de datos )
| Número de pieza | HUF76139S3S | |
| Descripción | 75A/ 30V/ 0.0075 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HUF76139P3, HUF76139S3S
September 1999 File Number 4399.5
75A, 30V, 0.0075 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76139.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76139P3
TO-220AB
76139P
HUF76139S3S
TO-263AB
76139S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76139S3ST.
Features
• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.0075Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
6-154
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
HUF76139P3, HUF76139S3S
Typical Performance Curves (Continued)
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120
-40oC
25oC
150oC
80
40
VDD = 15V
0
0123456
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
160
VGS = 10V
VGS = 5V
VGS = 4.5V
VGS = 4V
120
VGS = 3.5V
80
40
0
0
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1234
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
FIGURE 8. SATURATION CHARACTERISTICS
14
ID = 75A
PULSE DURATION = 80µs
ID = 50A
DUTY CYCLE = 0.5% MAX
12
10
ID = 25A
8
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 75A
1.5
1.0
6
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
0.5
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1.0
0.4
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0.9
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
6-158
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUF76139S3S.PDF ] | |
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