HUF76113T3ST Datasheet PDF - Fairchild Semiconductor
| Part Number | HUF76113T3ST | |
| Description | 4.7A/ 30V/ 0.031 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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Data Sheet
HUF76113T3ST
June 2003
4.7A, 30V, 0.031 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
® manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Ordering Information
PART NUMBER
HUF76113T3ST
PACKAGE
SOT-223
BRAND
76113
NOTE: HUF76113T3ST is available only in tape and reel.
Features
• Logic Level Gate Drive
• 4.7A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.031Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER™ Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
SOT-223
GATE
DRAIN
SOURCE
DRAIN
(FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76113T3ST Rev. B2
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HUF76113T3ST
Typical Performance Curves (Continued)
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25 VDD = 15V
20
15
10
5
0
0
150oC
25oC
-55oC
1234
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
5
30
25
VGS = 10V
VGS = 5V
VGS = 4V
20 VGS = 3.5V
15
10
5
0
0
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
123
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
FIGURE 8. SATURATION CHARACTERISTICS
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
70
60
ID = 4.7A
50
40
ID = 0.5A
30
20
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.6 VGS = 10V, ID = 4.7A
1.4
1.2
1.0
0.8
0.6
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76113T3ST Rev. B2
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HUF76113T3ST electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HUF76113T3ST.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| HUF76113T3ST | The function is 4.7A/ 30V/ 0.031 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET. Fairchild Semiconductor | |
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