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PDF HUF76113DK8 Data sheet ( Hoja de datos )
| Número de pieza | HUF76113DK8 | |
| Descripción | 6A/ 30V/ 0.032 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HUF76113DK8
January 2003
6A, 30V, 0.032 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is
® manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76113DK8
MS-012AA
76113DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76113DK8T.
Features
• Logic Level Gate Drive
• 6A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.032Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER™ Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
S1(1)
G1(2)
D1(8)
D1(7)
S2(3)
G2(4)
D2(6)
D2(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
©2003 Fairchild Semiconductor Corporation
HUF76113DK8 Rev. B1
1 page  
HUF76113DK8
Typical Performance Curves (Continued)
30 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25 VDD = 15V
20
15
10
5 150oC
25oC
-55oC
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
5
30
VGS = 4V
25 VGS = 10V
VGS = 5V
20 VGS = 4.5V
VGS = 3.5V
15
10
VGS = 3V
5 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
200
ID = 6A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
150
ID = 1.8A
100
50
0
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 6A
1.4
1.2
1.0
0.8
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
HUF76113DK8 Rev. B1
5 Page 
SPICE Thermal Model
REV June 1998
HUF76113DK8
Copper Area = 0.02 in2
CTHERM1 th 8 8.5e-4
CTHERM2 8 7 1.8e-3
CTHERM3 7 6 5.0e-3
CTHERM4 6 5 1.3e-2
CTHERM5 5 4 4.0e-2
CTHERM6 4 3 9.0e-2
CTHERM7 3 2 4.0e-1
CTHERM8 2 tl 1.4
RTHERM1 th 8 3.5e-2
RTHERM2 8 7 6.0e-1
RTHERM3 7 6 2
RTHERM4 6 5 8
RTHERM5 5 4 18
RTHERM6 4 3 39
RTHERM7 3 2 42
RTHERM8 2 tl 48
SABER Thermal Model
Copper Area = 0.02 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 = 8.5e-4
ctherm.ctherm2 8 7 = 1.8e-3
ctherm.ctherm3 7 6 = 5.0e-3
ctherm.ctherm4 6 5 = 1.3e-2
ctherm.ctherm5 5 4 = 4.0e-2
ctherm.ctherm6 4 3 = 9.0e-2
ctherm.ctherm7 3 2 = 4.0e-1
ctherm.ctherm8 2 tl = 1.4
rtherm.rtherm1 th 8 = 3.0e-2
rtherm.rtherm2 8 7 = 6.0e-1
rtherm.rtherm3 7 6 = 3.8
rtherm.rtherm4 6 5 = 9.5
rtherm.rtherm5 5 4 = 25
rtherm.rtherm6 4 3 = 38
rtherm.rtherm7 3 2 = 25
rtherm.rtherm8 2 tl = 38
}
COMPONANT
CTHERM6
CTHERM7
CTHERM8
RTHERM6
RTHERM7
RTHERM8
0.02 in2
9.0e-2
4.0e-1
1.4
39
42
48
HUF76113DK8
th JUNCTION
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
8
7
6
5
4
3
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
CTHERM7
CTHERM8
tl CASE
TABLE 1. Thermal Models
0.14 in2
0.25 in2
1.3e-1
1.5e-1
6.0e-1
4.5e-1
2.5 2.2
26 20
32 31
35 38
0.38 in2
1.5e-1
6.5e-1
3
20
29
31
0.50 in2
1.5e-1
7.5e-1
3
20
23
25
©2003 Fairchild Semiconductor Corporation
HUF76113DK8 Rev. B1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HUF76113DK8.PDF ] | |
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