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PDF HUF76105SK8 Data sheet ( Hoja de datos )
| Número de pieza | HUF76105SK8 | |
| Descripción | 5.5A/ 30V/ 0.050 Ohm/ N-Channel/ Logic | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HUF76105SK8
January 2003
5.5A, 30V, 0.050 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76105.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76105SK8
MS-012AA
76105SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76105SK8T.
Features
• Logic Level Gate Drive
• 5.5A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.050Ω
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
NC(1)
DRAIN(8)
SOURCE(2)
DRAIN(7)
SOURCE(3)
DRAIN(6)
GATE(4)
DRAIN(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
©2003 Fairchild Semiconductor Corporation
HUF76105SK8 Rev. B1
1 page  
HUF76105SK8
Typical Performance Curves (Continued)
25
250µs PULSE TEST
DUTY CYCLE = 0.5% MAX
20 VDD = 15V
15
-55oC
25oC
150oC
10
5
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
5
25
VGS = 10V
VGS = 5V
20
VGS = 4V
15
10
VGS = 3V
5
TA = 25oC 250µs PUVLGSSE= T3E.5SVT
DUTY CYCLE = 0.5% MAX
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
110
ID = 5.5A
90
250µs PULSE TEST
DUTY CYCLE = 0.5% MAX
70
ID = 1.4A
50
30
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.8
250µs PULSE TEST
DUTY CYCLE = 0.5% MAX
1.6
VGS = 10V, ID = 5.5A
1.4
1.2
1.0
0.8
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.15
ID = 250µA
1.1
1.05
1.0
0.95
0.9
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76105SK8 Rev. B1
5 Page 
SPICE Thermal Model
REV June 1998
HUF76105SK8
Copper Area = 0.02 in2
CTHERM1 th 8 8.5e-4
CTHERM2 8 7 1.8e-3
CTHERM3 7 6 5.0e-3
CTHERM4 6 5 1.3e-2
CTHERM5 5 4 4.0e-2
CTHERM6 4 3 9.0e-2
CTHERM7 3 2 4.0e-1
CTHERM8 2 tl 1.4
RTHERM1 th 8 3.5e-2
RTHERM2 8 7 6.0e-1
RTHERM3 7 6 2
RTHERM4 6 5 8
RTHERM5 5 4 18
RTHERM6 4 3 39
RTHERM7 3 2 42
RTHERM8 2 tl 48
SABER Thermal Model
Copper Area = 0.02 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 = 8.5e-4
ctherm.ctherm2 8 7 = 1.8e-3
ctherm.ctherm3 7 6 = 5.0e-3
ctherm.ctherm4 6 5 = 1.3e-2
ctherm.ctherm5 5 4 = 4.0e-2
ctherm.ctherm6 4 3 = 9.0e-2
ctherm.ctherm7 3 2 = 4.0e-1
ctherm.ctherm8 2 tl = 1.4
rtherm.rtherm1 th 8 = 3.5e-2
rtherm.rtherm2 8 7 = 6.0e-1
rtherm.rtherm3 7 6 = 2
rtherm.rtherm4 6 5 = 8
rtherm.rtherm5 5 4 = 18
rtherm.rtherm6 4 3 = 39
rtherm.rtherm7 3 2 = 42
rtherm.rtherm8 2 tl = 48
COMPONANT
CTHERM6
CTHERM7
CTHERM8
RTHERM6
RTHERM7
RTHERM8
0.02 in2
9.0e-2
4.0e-1
1.4
39
42
48
HUF76105SK8
}
th JUNCTION
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
8
7
6
5
4
3
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
CTHERM7
CTHERM8
tl CASE
TABLE 1. Thermal Models
0.14 in2
0.257 in2
1.3e-1
1.5e-1
6.0e-1
4.5e-1
2.5 2.2
26 20
32 31
35 38
0.38 in2
1.5e-1
6.5e-1
3
20
29
31
0.493 in2
1.5e-1
7.5e-1
3
20
23
25
©2003 Fairchild Semiconductor Corporation
HUF76105SK8 Rev. B1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HUF76105SK8.PDF ] | |
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