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HUF75842S3S fiches techniques PDF

Fairchild Semiconductor - 43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFET

Numéro de référence HUF75842S3S
Description 43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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HUF75842S3S fiche technique
Data Sheet
HUF76009P3, HUF76009D3S
December 2001
20A, 20V, 0.027 Ohm, N-Channel, Logic
Level Power MOSFETs
THE HUF76009 is an application-specific MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses thereby increasing the overall system efficiency.
Symbol
D
G
S
Packaging
HUF76009D3S
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
HUFD76009P3
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
Features
• 20A, 20V
- rDS(ON) = 0.027Ω, VGS = 10V
- rDS(ON) = 0.039Ω, VGS = 5V
• PWM optimized for synchronous buck applications
• Fast Switching
• Low Gate Charge
- Qg Total 11nC (Typ)
• Low Capacitance
- CISS 470pF (Typ)
- CRSS 50pF (Typ)
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76009P3
TO-220AB
76009P
HUF76009D3S
TO-252AA
76009D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
SYMBOL
PARAMETER
HUF76009P3,
HUF76009D3S
UNITS
VDSS
VDGR
VGS
ID
ID
IDM
PD
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (RGS = 20k) (Note 1)
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Figure 2)
Continuous (TC = 100oC, VGS = 5V)
Pulsed Drain Current
Power Dissipation
Derate Above 25oC
TJ, TSTG
Operating and Storage Temperature
Maximum Temperature for Soldering
TL
Tpkg
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
THERMAL SPECIFICATIONS
RθJC
RθJA
Thermal Resistance Junction to Case, TO-220, TO-252
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-252
20
20
±16
20
16
Figure 4
41
0.33
-55 to 150
300
260
3.04
62
100
V
V
V
A
A
A
W
W/oC
oC
oC
oC
oC/W
oC/W
oC/W
NOTE:
1. TJ = 25oC to 125oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
HUF76009P3, HUF76009D3S Rev. B

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