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HUF75842P3 fiches techniques PDF

Fairchild Semiconductor - 43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFET

Numéro de référence HUF75842P3
Description 43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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HUF75842P3 fiche technique
HUF75945G3, HUF75945P3, HUF75945S3ST
Data Sheet
December 2001
38A, 200V, 0.071 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
Symbol
D
G
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.071Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75945G3
HUF75945P3
HUF75945S3ST
TO-247
TO-220AB
TO-263AB
75945G
75945P
75945S
NOTE: When ordering, use the entire part number.
S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF75945G3,HUF75945P3,
HUF75945S3ST
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
200
200
±20
38
27
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
310
2.07
-55 to 175
300
260
W
W/oC
oC
oC
oC
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B

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